Electron-Stimulated Modification of Si Surfaces.
نویسندگان
چکیده
منابع مشابه
Electron-Stimulated Modification of Si Surfaces
Scanning tunneling microscopy studies show significant structural modifications that involved atom desorption and displacement following mild irradiation by electrons of 90–2000 eV. For Sis111ds7 3 7d, adatom layer vacancies increased monotonically with incident energy. For Sis100d-s2 3 1d, irradiation produced dimer vacancies, and ad-dimers as Si atoms transferred to the terrace. The modificat...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1999
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.42.905